China’s memory chip giant ChangXin Memory Technologies (CXMT) has reported “key progress” in a new structure that rivals Samsung Electronics and SK Hynix are also working on to boost memory density.
CXMT planned to roll out a new server-memory product based on the structure by the end of 2026, president Cao Kanyu said at an industrial event in Shanghai over the weekend, according to a company statement.
At the centre of the development is the “4F square” design, in which each memory cell occupies an area of four square F, with F representing the minimum line width of a semiconductor. The structure enables higher storage density by fitting more cells onto a single chip.
For now, mainstream commercial dynamic random-access memory (DRAM) uses a 6F square-cell structure.